Fiber-coupled &
collimated laser diode devices & systems


Featuring:

Custom Wavelength
High Power
High Brightness
Detachable Fiber
Superior beam quality
High quality optics for focusing, collimation


Get the perfect pump source for high power fiber lasers:

1kW collimated or fiber-coupled pump source
for kilowatt level fiber laser systems

Passive Cooled Laser Diode Bars and Stacks

Passive Conduction Cooled Single Laser Diode Bars
CS SERIES (CW/QCW)
Power Output20-80W (CW) 150-200W (QCW)
Wavelength792-1550nm (CW) 808-940nm (QCW)
Passive Conduction Cooled Single Laser Diode Bars
HCS SERIES (CW/QCW)
- HARD SOLDER -
Power Output40W (CW)
250W (QCW)
Wavelength808nm
Passive Conduction Cooled Vertical Stack Laser Diode Bars
G-STACK SERIES (QCW)
Power Output150-250W
Wavelength808-940nm

Specifications

792nm, 808nm, 825nm 792 nm / 808 nm / 825 nm 976nm 976 nm
880nm, 915nm, 940nm 880 nm / 915 nm / 940 nm 1470nm, 1550nm 1470 nm / 1550 nm


792 nm / 808 nm / 825 nm TOP

  CS01/CS04
-50-792		 CS01/CS04
-40-808		 CS01/CS04
-40-808		 CS01/CS04
-60-808		 CS01/CS04
-60-825
Optical3,8
Center Wavelength 792 ±3 nm 808 ±5 nm 808 ±3 nm 808 ±3 nm 825 ±3 nm
Output Power, Po2 50 W 40 W 40 W 60 W 60 W
Fill Factor 30% 20% 30%
Number of Emitters 19
Emitter Width 150 µm 100 µm 150 µm
Spectral Width FWHM ≤3 nm ≤4 nm ≤3 nm ≤3 nm ≤4 nm
Spectral Width FW90%E ≤6 nm ≤6 nm ≤7 nm ≤5 nm ≤7 nm
Fast Axis Divergence (FWHM)4,7 35°
Slow Axis Divergence (FWHM)5 8°
Polarization Mode TE TE/TM TE TE/TM TM
Wavelength Temp. Coefficient ~0.27 nm/°C ~0.28 nm/°C
Electrical3,8
Operating Current, Iop ≤60 A ≤48 A ≤46 A ≤70 A ≤75 A
Threshold Current, Ith ≤13 A ≤10 A ≤10 A ≤15 A ≤17 A
Operating Voltage, Vop ≤2 V
Slope Efficiency ≥1 W/A ≥1.05 W/A ≥1.05 W/A ≥1.1 W/A ≥1 W/A
Power Conversion Efficiency ≥45% ≥45% ≥50% ≥48% ≥45%
Thermal Parameters
Operating Temperature 15-35 °C
Storage Temperature6 -40-60 °C
Recommended Heatsink Capacity ≥90 W ≥80 W ≥90 W ≥120 W ≥120 W


880 nm / 915 nm / 940 nm TOP
  CS01/CS04
-60-880		 CS03
-50-915		 CS01/CS04
-60-915		 CS01/CS04
-60-940
Optical3,8
Center Wavelength 880 ±3 nm 915 ±3 nm 915 ±3 nm 940 ±3 nm
Output Power, Po2 60 W 50 W 60 W
Fill Factor 30% 20%
Number of Emitters 19 7 19
Emitter Width 150 µm 100 µm 200 µm 100 µm
Spectral Width FWHM ≤3 nm ≤4 nm
Spectral Width FW90%E ≤5 nm ≤6 nm ≤7 nm
Fast Axis Divergence (FWHM)4,7 35°
Slow Axis Divergence (FWHM)5 8°
Polarization Mode TE
Wavelength Temp. Coefficient ~0.30 nm/°C ~0.32 nm/°C ~0.33 nm/°C
Electrical3,8
Operating Current, Iop ≤70 A ≤55 A ≤60 A
Threshold Current, Ith ≤15 A ≤6 A ≤8 A
Operating Voltage, Vop ≤2 V ≤1.85 V
Slope Efficiency ≥1.1 W/A ≥1.05 W/A
Power Conversion Efficiency ≥50% ≥55%
Thermal Parameters
Operating Temperature 15-35 °C
Storage Temperature6 -40-60 °C
Recommended Heatsink Capacity ≥120 W ≥90 W ≥120 W


976 nm TOP
  CS03
-50-976		 CS01/CS04
-60-976		 CS01/CS04
-60-976		 CS01/CS04
-80-976
Optical3,8
Center Wavelength 976 ±3 nm 976 ±3 nm 976 ±3 nm 976 ±3 nm
Output Power, Po2 50 W 60 W 80 W
Fill Factor 20% 30% 20% 30%
Number of Emitters 7 19
Emitter Width 100 µm 150 µm 100 µm 150 µm
Spectral Width FWHM ≤5 nm ≤4 nm ≤4.5 nm ≤4 nm
Spectral Width FW90%E ≤8 nm
Fast Axis Divergence (FWHM)4,7 35°
Slow Axis Divergence (FWHM)5 8°
Polarization Mode TE
Wavelength Temp. Coefficient ~0.34 nm/°C
Electrical3,8
Operating Current, Iop ≤55 A ≤65 A ≤86 A
Threshold Current, Ith ≤5 A ≤7 A ≤6 A ≤10 A
Operating Voltage, Vop ≤1.85 V
Slope Efficiency ≥1 W/A ≥1.05 W/A ≥0.95 W/A ≥1 W/A
Power Conversion Efficiency ≥55% ≥50% ≥55%
Thermal Parameters
Operating Temperature 15-35 °C
Storage Temperature6 -40-60 °C
Recommended Heatsink Capacity ≥90 W ≥120 W ≥140 W


1470 nm / 1550 nm TOP
  CS01/CS04
-20-1470		 CS01/CS04
-20-1550		  
Optical3,8
Center Wavelength 1470 ±20 nm 1550 ±20 nm
Output Power, Po2 20 W
Fill Factor 20%
Number of Emitters 19
Emitter Width 100 µm
Spectral Width FWHM ≤10 nm ≤15 nm
Spectral Width FW90%E \
Fast Axis Divergence (FWHM)4,7 32°
Slow Axis Divergence (FWHM)5 8°
Polarization Mode TE
Wavelength Temp. Coefficient ~0.4 nm/°C
Electrical3,8
Operating Current, Iop ≤60 A ≤80 A
Threshold Current, Ith ≤5 A ≤8 A
Operating Voltage, Vop ≤1.3 V
Slope Efficiency ≥0.35 W/A ≥0.25 W/A
Power Conversion Efficiency ≥25% ≥20%
Thermal Parameters
Operating Temperature 15-35 °C
Storage Temperature6 -40-60 °C
Recommended Heatsink Capacity ≥70 W
2 Reduced lifetime if used above nominal operating conditions.
3 Data at 25°C temperature, unless otherwise stated.
4 For fast axis collimation: divergence <0.5°.
5 Slow axis collimation is available for bars with fill factor ≤30%.
6 A non-condensing environment is required for storage and operation below ambient dew point.
7 For smile requirements, please contact us.
8 If there are any other requirements, please contact us.

Specifications

808 nm / 940 nm
  CS01/CS04
-150-808(Q)		 CS01/CS04
-200-808(Q)		 CS01/CS04
-200-940(Q)		  
Optical3,7
Center Wavelength 808 ±3 nm 808 ±3 nm 940 ±3 nm
Output Power, Po2 150 W 200 W 200 W
Fill Factor 83% 80% 75%
Number of Emitters 75 40 62
Emitter Width 100 µm 200 µm 100 µm
Spectral Width FWHM ≤4 nm
Spectral Width FW90%E ≤7 nm
Fast Axis Divergence (FWHM)4,6 40°
Slow Axis Divergence (FWHM) 8°
Polarization Mode TE
Wavelength Temp. Coefficient ~0.28 nm/°C ~0.33 nm/°C
Electrical3,7
Operating Current, Iop ≤145 A ≤200 A ≤200 A
Threshold Current, Ith ≤25 A ≤30 A ≤20 A
Operating Voltage, Vop ≤2 V
Slope Efficiency ≥1.1 W/A
Power Conversion Efficiency ≥50% ≥55% ≥50%
Pulse Width ≤0.3 ms
Duty Cycle ≤10%
Thermal Parameters
Operating Temperature 15-35 °C
Storage Temperature5 -40-60 °C
Recommended Heatsink Capacity ≥70 W ≥100 W ≥100 W
2 Reduced lifetime if used above nominal operating conditions.
3 Data at 25°C temperature, unless otherwise stated.
4 For fast axis collimation: divergence <0.5°.
5 A non-condensing environment is required for storage and operation below ambient dew point.
6 For smile requirements, please contact us.
7 If there are any other requirements, please contact us.

Specifications

808 nm

  HCS01-40-808  
Optical3,8
Center Wavelength 808 ±3 nm
Output Power, Po2 40 W
Fill Factor 30%
Number of Emitters 19
Emitter Width 150 µm
Spectral Width FWHM ≤3 nm
Spectral Width FW90%E ≤7 nm
Fast Axis Divergence (FWHM)4,7 35°
Slow Axis Divergence (FWHM)5 8°
Polarization Mode TM
Wavelength Temp. Coefficient ~0.28 nm/°C
Electrical3,8
Operating Current, Iop ≤52 A
Threshold Current, Ith ≤15 A
Operating Voltage, Vop ≤2 V
Slope Efficiency ≥1.05 W/A
Power Conversion Efficiency ≥45%
Thermal Parameters
Operating Temperature 15-25 °C
Storage Temperature6 -40-60 °C
Recommended Heatsink Capacity ≥80 W
2 Reduced lifetime if used above nominal operating conditions.
3 Data at 25°C temperature, unless otherwise stated.
4 For fast axis collimation: divergence <0.5°.
5 Slow axis collimation is available for bars with fill factor ≤30%.
6 A non-condensing environment is required for storage and operation below ambient dew point.
7 For smile requirements, please contact us.
8 If there are any other requirements, please contact us.

Specifications

808 nm

  HCS01-250-808(Q)  
Optical3,7
Center Wavelength 808 ±3 nm
Output Power, Po2 250 W
Fill Factor 75%
Number of Emitters 62
Emitter Width 100 µm
Spectral Width FWHM ≤5 nm
Spectral Width FW90%E ≤7 nm
Fast Axis Divergence (FWHM)4,6 35°
Slow Axis Divergence (FWHM) 8°
Polarization Mode TE
Wavelength Temp. Coefficient ~0.28 nm/°C
Electrical3,7
Operating Current, Iop ≤240 A
Threshold Current, Ith ≤25 A
Operating Voltage, Vop ≤2 V
Slope Efficiency ≥1.1 W/A
Power Conversion Efficiency ≥55%
Pulse Width ≤0.3 ms
Duty Cycle ≤10%
Thermal Parameters
Operating Temperature 15-25 °C
Storage Temperature5 -40-60 °C
Recommended Heatsink Capacity ≥100 W
2 Reduced lifetime if used above nominal operating conditions.
3 Data at 25°C temperature, unless otherwise stated.
4 For fast axis collimation: divergence <0.5°.
5 A non-condensing environment is required for storage and operation below ambient dew point.
6 For smile requirements, please contact us.
7 If there are any other requirements, please contact us.

Specifications

808nm 808 nm
940nm 940 nm


808 nm TOP

  GSxx-Y
-150-808(Q)1		 GSxx-Y
-200-808(Q)1		 GSxx-Y
-250-808(Q)1		  
Optical3,5
Center Wavelength 808 ±3 nm
Output Power per Bar, Po/Bar2 150 W 200 W 250 W
Number of Bars 1~12
Spectral Width FWHM ≤6 nm ≤5 nm ≤5 nm
Spectral Width FW90%E ≤8 nm ≤7 nm ≤8 nm
Polarization Mode TE
Wavelength Temp. Coefficient ~0.28 nm/°C
Electrical3,5
Operating Current, Iop ≤160 A ≤200 A ≤250 A
Threshold Current, Ith ≤20 A ≤30 A ≤30 A
Operating Voltage, Vop ≤2 V
Slope Efficiency ≥1.1 W/A
Power Conversion Efficiency ≥50%
Pulse Width ≤0.3 ms
Duty Cycle ≤1%
Thermal Parameters
Operating Temperature 15-25 °C
Storage Temperature4 -40-60 °C
Recommended Heatsink Capacity/Bar ≥6 W ≥8 W ≥10 W


940 nm TOP

  GSxx-Y
-150-940(Q)1		 GSxx-Y
-200-940(Q)1		 GSxx-Y
-250-940(Q)1		  
Optical3,5
Center Wavelength 940 ±3 nm
Output Power per Bar, Po/Bar2 150 W 200 W 250 W
Number of Bars 1~12
Spectral Width FWHM ≤5 nm ≤6 nm ≤6 nm
Spectral Width FW90%E ≤8 nm
Polarization Mode TE
Wavelength Temp. Coefficient ~0.34 nm/°C
Electrical3,5
Operating Current, Iop ≤160 A ≤200 A ≤250 A
Threshold Current, Ith ≤25 A ≤30 A ≤30 A
Operating Voltage, Vop ≤2 V
Slope Efficiency ≥1.05 W/A
Power Conversion Efficiency ≥52%
Pulse Width ≤0.3 ms
Duty Cycle ≤1%
Thermal Parameters
Operating Temperature 15-25 °C
Storage Temperature4 -40-60 °C
Recommended Heatsink Capacity/Bar ≥6 W ≥8 W ≥10 W
1 Model Name Breakdown - GSxx-Y-150-808(Q): xx = Structure Code (01, 02, 03), Y = Number of bars, 150 = Output Power (W), 808 = Center Wavelength (nm), (Q) = QCW Mode.
2 Reduced lifetime if used above nominal operating conditions.
3 Data at 25°C temperature, unless otherwise stated.
4 A non-condensing environment is required for storage and operation below ambient dew point.
5 If there are any other requirements, please contact us.
 
Applications
 
  •Brazing •Material processing •Printing
  •Cladding and coating •Medical therapeutics •Projection display
  •DPSSL pumping •Metal cutting •Silicon wafer treatment
  •Fiber amplifiers •Metal heating •Soldering
  •Fiber laser pumping •Metal welding •Telecommunications
  •Hardening and heat treatment •Plastic cutting •Thermal surface treatment
  •Illumination •Plastic welding •Wafer scribing
  •Marking •Powder fusion •Welding
 


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